Samsung 990 Evo Plus
MZ-V9S1T0BW 1TB | MZ-V9S2T0BW 2TB | MZ-V9S4T0BW 4TB
Blast through tasks faster. 990 EVO Plus with the latest NAND offers boosted sequential read/write speeds up to 7,250/6,300MB/s. Huge files, instant transfer.
• Form Factor: M.2
• Capacity: 1TB, 2TB, 4TB
• Sequential Read Speed: Up to 7,250 MB/s
• Sequential Write Speed: Up to 6,300 MB/s
- Interface: PCIe® 4.0 x4 / 5.0 x2 NVMe™ 2.0
- Capacity: 1TB | 2TB | 4TB
- Controller: Samsung in-house Controller
- NAND Flash Memory: Samsung V-NAND TLC
- Cache Memory: HMB (Host Memory Buffer)
- Dimension: Max 80.15 x Max 22.15 x Max 2.38 (mm)
- Form Factor: M.2 (2280)
- Sequential Read: 7,150MB/s | 7,250MB/s |7,250MB/s
- Sequential Write: 6,300MB/s | 6,300MB/s | 6,300MB/s
- Random Read: 850KIOPS | 1,000KIOPS | 1,050KIOPS
- Random Write: 1,350KIOPS | 1,350KIOPS | 1,400KIOPS
- Operating: 0°C to 70°C
- (Measured by S.M.A.R.T. Temperature Proper airflow recommended)
- Non-Operating: -40°C to 85°C
- Humidity: 5% to 95% non-condensing
